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Stevens Institute of Technology
Vita: S. Tewksbury
Journal & Reprint Publications
  • S. K. Tewksbury, "The challenges and rewards of the transition to IP telephony for developing nations: Central America," Connect World (Fredric Morris, Ed), International Telecommunications Union, invited.  Dec. 2001. 

  • S.K. Tewksbury and L.A. Hornak, "Optical distribution of clock signals in microelectronic systems," Journal of VLSI Signal Processing: Special issue on high performance clock distribution.  (Invited paper, 1998).

  • S. K. Tewksbury, L. A. Hornak, H. E. Nariman, S. M. Langsjoen, N. J. Hall. J. J. Hall, S. P. McGinnis, "Towards Cointegration of Optical Interconnections within Silicon Microelectronic Systems,”  Selected Papers on Optical Interconnects and Packaging, S. H. Lee Editor, SPIE Milestone Series, SPIE Press, MS142, pp. 532-543. (1997).

  • S.K. Tewksbury and L.A. Hornak, "Optical distribution of clock signals in microelectronic systems," Journal of VLSI Signal Processing,  Special issue on high performance clock distribution, vol 4(2), pp. 95-133 (1996).

  • S.K. Tewksbury, L.A. Hornak, L.A. Tewksbury, and L. Chan, "A systems level evaluation of high temperature superconducting interconnections on MCMs for high performance systems," Journal of Microelectronic Systems Integration, vol. 4(2), pp. 95-133 (1996).

  • S.K. Tewksbury, "Review of developments in intra-system communication networks," Journal of Microelectronic Systems Integration, vol. 4(1), pp. 45-74 (1996).

  • S.K. Tewksbury and L.A. Hornak, "Can optoelectronic and silicon chips be integrated?," Laser Focus World, vol. 30(5), pp. 151-164 (1994).

  • S. K. Tewksbury and L. A. Hornak, "Multichip Modules: A platform for optical interconnections within microelectronic systems," invited paper, special issue on OEICs,  Inter. J. Optoelectronics, Devices, and Technologies, MITA Press (Japan), vol. 9(1), pp. 55-80 (1994).

  • S. K. Tewksbury, L. A. Hornak H. E. Nariman, and S. P. McGinnis, "Cointegration of Optoelectronics and Submicron CMOS," IEEE Trans. CHMT, Special Issue on Wafer-Scale Integration, 16(7), 674-685 (1993).

  • S. K. Tewksbury, L. A. Hornak, H. E. Nariman, S. M. Langssjoen, N. J. Hall, J. J. Hall and  S. P. McGinnis, "Towards Co-integration of Optical Interconnections within Silicon Microelectronic Systems," J. Parallel and Distributed Computing 17, 188-99 (1993).

  • S.K. Tewksbury, L.A. Hornak, I.V. Petrova, M.T. Uppuluri, S.P. McGinnis, and H.E. Nariman, "Wafer-area networks: A communications function for investigation of advanced packaging technologies," J. Microelectronic Systems Integration," vol. 1(4), 1993.

  • S.K. Tewksbury and R.W. Hallock, "Oversampled, linear  predictive and noise shaping coders of order N > 1," reprinted in  Oversampled Delta-Sigma Data Converters, (J.C. Candy and G.C. Temes, Eds), IEEE Press, NY, pp. 139-149 (1992).

  • S. K. Tewksbury and L. A. Hornak, "Silicon ULSI systems: A new communication challenge for optoelectronics,” reprinted in Emerging Optoelectronic Technologies, Selvarajan, Sonde, Shenai and Tripathi (Eds.) Vedams Books International 1992.

  • S.K. Tewksbury et al, "IEEE Design and Test Roundtable: What is Design for Manufacturability," IEEE Design and Test of Computers, pp. 66-76 (Sept. 1991).

  • L. A. Hornak, T. W. Weidman, E. W. Kwock, W. R. Holland, G. L. Wolk and S. K. Tewksbury, " The impact of polymer integrated optics on silicon  wafer area networks," Current Overviews in Optical Science and Engineering II, SPIE Advent Technology Book Series, AT2, pp. 348-58, (1990).

  • L. A. Hornak, T. W. Weidman, E. W. Kwock, W. R. Holland, G. L. Wolk and S. K. Tewksbury, " The impact of polymer integrated optics on silicon wafer area networks," invited, Proc. SPIE, vol. 1337, pp. 12-22 (1990).

  • L. A. Hornak, S. K. Tewksbury, M. Hatamian, E. G. Burkhardt, R. E. Howard, P. M. Mankiewich and B. L. Straughn, "Electrical behavior of a 31 cm, thin film YBaCuO superconducting microstrip," J. Appl. Physics, vol. 66(10), pp. 5066-5071 (1989).

  • M. Hatamian, L.A. Hornak, T.E. Little and S.K. Tewksbury, "Fundamental Interconnection Issues," reprinted in Electronic Materials Handbook, ASM International, pp. 2-11 (1989).

  • S. K. Tewksbury and L. A. Hornak, "Wafer level system integration: A review," IEEE Circuits and Devices, vol. 5 (5), pp. 22-30 (1989).

  • S. K. Tewksbury, L. A. Horak and M. Hatamian, "High-Tc superconductors for digital system interconnections," Solid State Electronics, vol. 32(11), pp. 947-959 (1989).

  • L. A. Hornak, S. K. Tewksbury and M. Hatamian, "The impact of high-Tc superconductivity on system communications," IEEE Trans. Comp., Hybr., and Manufact. Technol., vol. 11(4), pp. 412-418 (Dec. 1988).

  • S. K. Tewksbury and L. A. Hornak, "Communication network issues and high density interconnects in large-scale distributed computing systems," IEEE J. Selected Areas in Communications, vol. 6(3), pp. 587-609 (1988).

  • L. A. Hornak and S. K. Tewksbury, "On the feasibility of through-wafer optical interconnects for hybrid wafer-scale integrated architectures," IEEE Trans. Elect. Dev., vol. ED-34(7), pp. 1557-1563 (1987).

  • S. K. Tewksbury, et al., "FIR digital filters for high sample rate applications," IEEE Commun. Mag, vol. 25(7), pp. 62-72 (1987).

  • M. Hatamian, L. A. Hornak, T. E. Little, S. K. Tewksbury, and P. Franzon, "Fundamental interconnection issues," AT&T Techn. J., vol. 66(4), pp. 13-30 (1987).

  • S. K. Tewksbury, T. L. Lindstrom, L. A. Hornak, M. R. Biazzo and R. H. Bosworth, "Chip alignment templates for multi-chip module assembly," IEEE Trans. Comp., Hybr., and Manuf. Technol., vol. CHMT-10(1), pp. 111-121 (1987).

  • S. K. Tewksbury, M. R. Biazzo and T. L. Lindstrom, "Strong carrier freezeout above 77K in tellurium-doped buried-channel MOS transistors," IEEE Trans. Elect Dev, ED-32(1), pp. 67-69, (Jan 1985).

  • S. K. Tewksbury, "Atojoule MOSFET logic devices using low voltage swings and low temperatures," Solid State Electronics, vol 28(3), pp. 255-276 (1985).

  • S. K. Tewksbury, M. R. Biazzo, T. L. Lindstrom and D. M. Tennant, "Depletion layer formation rate at T < 30K in buried channel metal-oxide-semiconductor transistors," J. Appl. Phys., vol 56(2) (1984).

  • S. K. Tewksbury, T. R. Harrison, M. R. Biazzo, T. L. Lindstrom, D. M. Tennant and F. G. Storz, "Static and nonequilibrium transient conductance at strong carrier freeze out in a buried channel, metal-oxide-semiconductor transistor," J. Appl. Phys., vol 56(2), pp. 511-516 (1984).

  • M. A. Bosch, D. Herbst and S. K. Tewksbury, "Influence of light on NMOS transistors in laser micro-zone crystallized silicon layers," Microelectronics Journal, vol 14(6), pp. 82-87 (1983).

  • D. Herbst, M. A. Bosch and S. K. Tewksbury, "Substrate influence on NMOS transistors in large-area laser crystallized isolated silicon layers," IEEE Electron Device Letters, EDL-4, 205-207 (1983).

  • D. Herbst, M. A. Bosch and S. K. Tewksbury, "Island edge effects of transistors fabricated in large-area laser micro-zone crystallized Si on insulator," IEEE Electron Device Letters, EDL-4, 280-282 (1983).

  • D. Herbst, M. A. Bosch, R. A. Lemons, S. K. Tewksbury and T. R. Harrison, "PMOS transistors fabricated in large-area laser crystallized Si on silica," Electronics Letters, vol. 19, 12-14 (1983).

  • V. B. Lawrence and S. K. Tewksbury, "Multiprocessor implementation of adaptive digital filters," IEEE Trans. Communications, COM-31, 826-835 (1983).

  • S. K. Tewksbury, "Formation of high density electron-hole plasma in silicon MOS transistors below 25K," J. Appl. Phys., vol 54(2), 868-875 (1983).

  • J. S. Thompson and S. K. Tewksbury, "LSI signal processor architecture for telecommunication applications," IEEE Trans. Acoustics, Speech and Signal Processing, ASSP-30(4), 613-631 (1982).

  • S. K. Tewksbury, "Observation of discrete levels in metal-oxide- semiconductor field-effect transistors switched into weak inversion between 10 and 25K," Appl. Phys. Lett., vol 41(1), 62-64 (1982).

  • S. K. Tewksbury, "Transient response of N-channel metal-oxide-semiconductor field-effect transistors during turn-on at 10-25K," J. Appl. Phys., vol 53(5), 3865-3872 (1982).

  • S. K. Tewksbury, "N-channel enhancement mode MOSFET characteristics from 10-300K," IEEE Trans Electron Devices, ED-28, 1519-1529 (1981).

  • S. K. Tewksbury, F. Meyer, D. C. Rollenhagen, H. K. Schoenwetter and T. M. Souders, "Terminology related to S/H, A/D and D/A circuits," IEEE Trans. Circuits and Systems, CAS-25(7), 419-426 (1978).

  • S. K. Tewksbury and R. W. Hallock, "Oversampled linear predictive and noise-shaping coders of order N > 1," IEEE Trans. Circuits and Systems, CAS-25(7), 436-447 (1978).

  • S. K. Tewksbury, R. B. Kieburtz, J. S. Thompson and S. P. Verma, "Digital signal processor architecture," IEEE Communication Society Mag., 23-27 1978).

  • S. K. Tewksbury, R. B. Kieburtz, J. S. Thompson and S. P. Verma, "Digital signal processor architecture,"  IEEE Communication Society Mag., 23-27 1978.

  • G. L. Baldwin and S. K. Tewksbury, "Linear delta modulator circuit with 17 Mbit/sec sampling rate," IEEE Trans. Circuits and Systems, CAS-21(4), 553-561 (1974).

  • S. L. Freeny, R. B. Kieburtz, K. V. Mina and S. K. Tewksbury, "Design of digital filters for an all digital frequency division multiplex - time division multiplex translator," IEEE Trans Circuit Theory, CT-18(6), 702-711 (1971).

  • S. L. Freeny, R. B. Kieburtz, K. V. Mina and S. K. Tewksbury, "Systems analysis of a TDM/FDM translator / digital A-type channel bank," IEEE Trans Communications, COM-19(6), 1050-1059 (1971).